p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method
Author:
Affiliation:
1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37 01-142, Warsaw, Poland
2. Laboratoire Charles Coulomb (L2C), University of Montpellier, CNRS 34-095, Montpellier, France
Funder
Foundation for Polish Science
Polish National Science Center
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0038524
Reference34 articles.
1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
2. The 2018 GaN power electronics roadmap
3. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
4. N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
5. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
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