Existence of extinction temperature in WSixfilm growth from WF6and SiH4: An indication of the role played by radical chain reactions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108600
Reference7 articles.
1. Refractory metal silicides: Thin-film properties and processing technology
2. Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections
3. Kinetics and Mechanism of Selective Tungsten Deposition by LPCVD
4. Study on mechanism of selective chemical vapor deposition of tungsten usinginsituinfrared spectroscopy and Auger electron spectroscopy
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1. Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH4;Japanese Journal of Applied Physics;2024-01-04
2. Gas-phase reactions of WF6 with SiH4 for deposition of WSi n films free from powder formation;Japanese Journal of Applied Physics;2019-03-14
3. Low Temperature Chemical Vapor Deposition of Silicon-rich Tungsten Silicide Films from Tungsten Hexafluoride - Disilane Pre-activated Mixtures;INT J CHEM REACT ENG;2012
4. Kinetic modeling of tungsten silicide chemical vapor deposition from WF6 and Si2H6: Determination of the reaction scheme and the gas-phase reaction rates;Chemical Engineering Science;2007-11
5. Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6;Microelectronic Engineering;2006-10
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