Study on mechanism of selective chemical vapor deposition of tungsten usinginsituinfrared spectroscopy and Auger electron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347416
Reference11 articles.
1. Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections
2. Gas/surface reactions in the chemical vapor deposition of tungsten using WF6/SiH4 mixtures
3. Coriolis constants of spherical-top molecules from low-temperature infrared studies of vapor band contours
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3. Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD;The Journal of Chemical Physics;2017-02-07
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