Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections-Reference-Cited by-同舟云学术

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Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections

Published:1983-11 Issue:11 Volume:30 Page:1497-1505
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Saraswat K.C.,Brors D.L.,Fair J.A.,Monnig K.A.,Beyers R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31883/01483229.pdf?arnumber=1483229

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