Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3130728
Reference19 articles.
1. Diameter dependent transport properties of gallium nitride nanowire field effect transistors
2. Contact characteristics in GaN nanowire devices
3. Two- versus three-dimensional quantum confinement in indium phosphide wires and dots
4. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
5. Focused-ion-beam platinum nanopatterning for GaN nanowires: Ohmic contacts and patterned growth
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