Contact characteristics in GaN nanowire devices-Reference-Cited by-同舟云学术

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Contact characteristics in GaN nanowire devices

Published:2006-03-31 Issue:9 Volume:17 Page:2203-2206
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ham Moon-Ho,Choi Ji-Hyuk,Hwang Wonseok,Park Cheolmin,Lee Woo-Young,Myoung Jae-Min

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=9/a=021/pdf

Reference20 articles.

1. Room-Temperature Ultraviolet Nanowire Nanolasers

2. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

3. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

4. The Blue Laser Diode

5. GaN Electronics

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1. Microscale Contacts for Nanowire Characterization Using Microscope Projection Photolithography;ACS Applied Nano Materials;2024-03-26

2. Electrical Properties of Wide Bandgap Nanowires;Wide Bandgap Nanowires;2022-06-23

3. Investigation of pH Effect on the Performance of Undoped Silicon Carbide Nanowire Field-Effect Transistors for the Development of Chemical Sensors and Biosensors;Journal of Electronic Materials;2022-02-11

4. Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring;Advanced Science;2020-09-24

5. Recent developments in ion beam-induced nanostructures on AIII-BV compound semiconductors;Journal of Physics: Condensed Matter;2018-07-05

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