Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors-Reference-Cited by-同舟云学术

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Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Published:2006-02-07 Issue:5 Volume:17 Page:1264-1271
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Cha Ho-Young,Wu Huaqiang,Chandrashekhar Mvs,Choi Y C,Chae S,Koley G,Spencer M G

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=5/a=018/pdf

Reference25 articles.

1. Room-temperature transistor based on a single carbon nanotube

2. High-Mobility Nanotube Transistor Memory

3. Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

4. Electronic Detection of Specific Protein Binding Using Nanotube FET Devices

5. Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination

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4. Transport Characteristics of Gallium Nitride Nanowire Field-Effect Transistor (GaN-NWFET) for High Temperature Electronics;Nano;2021-01-19

5. Emerging Applications of III‐Nitride Nanocrystals;physica status solidi (a);2020-02-25

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