Author:
Son Dong-Hyeok,Thingujam Terirama,Dai Quan,Kim Jeong-Gil,Cristoloveanu Sorin,Lee Jung-Hee
Funder
Samsung
Kyungpook National University
Kementerian Pendidikan Malaysia
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference57 articles.
1. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric;Hashizume;Appl. Phys. Lett.,2003
2. T. Kikkawa, M. Nagahara, N. Okamoto, Y. Tateno, Y. Yamaguchi, N. Hara, K. Joshin, P.M. Asbeck, Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion, International Electron Devices Meeting. Technical Digest, IEEE, Washington, DC, USA, 2001, https://doi.org/10.1109/IEDM.2001.979574 25.4.1–25.4.4.
3. Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film;Huang;IEEE Electron Device Lett.,2012
4. Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs;Hasan;IEEE Electron Device Lett.,2013
5. The 2018 GaN power electronics roadmap;Amano;J. Phys. D. Appl. Phys.,2018
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