Transport Characteristics of Gallium Nitride Nanowire Field-Effect Transistor (GaN-NWFET) for High Temperature Electronics

Abstract

This paper presents a systematic investigation of high-temperature transport characteristics of a single nanowire Gallium Nitride nanowire field-effect transistor (GaN-NWFET) ranging from room temperature to as high as [Formula: see text]C for the first time. The GaN-NWFET demonstrated a very good on/off current ratio ([Formula: see text] of [Formula: see text] for the p-side and [Formula: see text] for the n-side at room temperature and considerably well at high temperatures. In fact, the device exhibited an on/off current ratio of [Formula: see text] and a transconductance value of [Formula: see text]S for the p-side at [Formula: see text]C indicating a good gating effect even at high temperatures. Additionally, the device exhibited very high mobilities with the hole mobility of [Formula: see text][Formula: see text]cm2/V. s and electron mobility of [Formula: see text] cm2/V. s at room temperature. Furthermore, the device showed very high transconductance values of [Formula: see text]S and [Formula: see text]S at the temperatures of [Formula: see text]C and [Formula: see text]C, respectively. As a consequence, the GaN-NWFET devices could find much use not only in high-power, but also in low-power transistor applications beyond the ambient temperature [Formula: see text]C) of silicon and silicon-on-insulator technologies for electronic and photonic circuits.