Diffusion of ion‐implanted Sn and Sb in heavily dopedn‐type silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99823
Reference10 articles.
1. The Role of Vacancies and Self-Interstitials in Impurity Diffusion in Silicon
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5. The diffusion of antimony in heavily doped and n- and p-type silicon
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2. Formation and Stability of Metallic Silicides during Ion-Beam-Mixing in the Systems of Mo/Si and Ti/Si;Materials Transactions, JIM;1999
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5. Diffusion of Electrically Active Sb Atoms in Heavily Doped Silicon: Monte-Carlo Simulation with Regard to Collective Phenomena;physica status solidi (b);1994-12-01
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