Behaviour of implanted arsenic in silicon single crystals subjected to transient heating with incoherent light-Reference-Cited by-同舟云学术

Behaviour of implanted arsenic in silicon single crystals subjected to transient heating with incoherent light

Published:1984-01 Issue:1 Volume:33 Page:51-58
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Nylandsted Larsen A.,Borisenko V. E.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01197086.pdf

Reference20 articles.

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2. Laser-Solid Interactions and Transient Thermal Processing of Materials, ed. by J. Narayan, W.L. Brown, and R.A. Lemons (North-Holland, New York 1983)

3. K. Nishiyama, A. Anai, N. Watanabe: Jpn. J. Appl. Phys.19, L 563 (1980)

4. C. Drowley, C. Hu: Appl. Phys. Lett.38, 876 (1981)

5. R.A. Powell, T.O. Yep, R.T. Fulks: Appl. Phys. Lett.39, 150 (1981)

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