Temperature‐dependent factors contributing toT0in graded‐index separate‐confinement‐heterostructure single quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97834
Reference8 articles.
1. Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes
2. Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers
3. Temperature dependence of threshold current for a quantum-well heterostructure laser
4. Temperature dependence of threshold current of GaAs quantum well lasers
5. Temperature dependence of threshold current in III‐V semiconductor lasers: Experimental prediction and explanation
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1. Analysis temperature characteristics of highly strained InGaAs-GaAsP-GaAs (λ1.17μm) quantum well lasers;SPIE Proceedings;2002-06-12
2. Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers;IEEE Journal of Quantum Electronics;2002-06
3. Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE;Journal of Crystal Growth;2001-07
4. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
5. Uncooled high-temperature (130/spl deg/C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s;IEEE Photonics Technology Letters;1997-05
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