Effects of oxygen related defects on the electrical and thermal behavior of a n+−p junction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633344
Reference28 articles.
1. Dependence on Morphology of Oxygen Precipitates upon Oxygen Supersaturation in Czochralski Silicon Crystals
2. An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode
3. Recombination properties of oxygen‐precipitated silicon
4. Contribution of injection in current noise due to generation and recombination of carriers in p–n junctions
5. Generation-recombination noise in highly asymmetrical p–n junctions
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3. Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs;IEEE Transactions on Electron Devices;2012-10
4. Impact of Ge Content and Recess Depth on the Leakage Current in Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}/\hbox{Si}$ Heterojunctions;IEEE Transactions on Electron Devices;2011-08
5. DLTS Studies of Al Diffused n-Si;Key Engineering Materials;2010-06
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