An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370667
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4. Dependence on Morphology of Oxygen Precipitates upon Oxygen Supersaturation in Czochralski Silicon Crystals
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