Optical Properties of n‐Type GaAs. III. Relative Band‐Edge Recombination Efficiency of Si‐ and Te‐Doped Crystals before and after Heat Treatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657237
Reference18 articles.
1. Effect of Heat Treatment on Photoluminescence of Te Doped GaAs
2. Optical Properties of n‐Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te‐Doped GaAs
3. Photoluminescence of Silicon‐Compensated Gallium Arsenide
4. Photoluminescence Study of Thermal Conversion in GaAs Grown from Silica Boats
5. SITE TRANSFER OF Si IN GaAs
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