Implanted Si atoms shifting between Ga sites and As sites by thermal stress in conductive‐layer GaAs crystals on semi‐insulating substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350910
Reference17 articles.
1. Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates
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3. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
4. GaAs phase effect on interfacial drain current of a 400‐μm‐wide gate Si‐implanted MESFET
5. Arsenic‐rich melt effect on threshold voltage scattering for Si‐implanted GaAs metal‐semiconductor field‐effect transistor
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2. Ensemble Monte Carlo particle investigation of hot electron induced source‐drain burnout characteristics of GaAs field‐effect transistors;Journal of Applied Physics;1995-08-15
3. Light Element Impurity Annalysis by Spectroscopy Annalysis for Semiinsulating Semiconductor Materials;Fourier Transform Spectroscopy New Methods and Applications;1995
4. Low Dislocation-Density and Vacancy-Rich Glassy-Pinning Quasi GaAs Crystal by Liquid-Encapsulated Czochralski Growth;MRS Proceedings;1993
5. The Low Specific Ohmic Contact Resistivity of Alloyed Ge—LOW—Content Au on Si—Implanted Electrically—Active GaAs Crystal Layers;MRS Proceedings;1993
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