GaAs phase effect on interfacial drain current of a 400‐μm‐wide gate Si‐implanted MESFET
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346764
Reference19 articles.
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3. Erratum: ‘‘Arsenic‐rich melt effect on threshold voltage scattering for Si‐implanted GaAs metal‐semiconductor field‐effect transistor’’ [J. Appl. Phys. 65, 846 (1989)]
4. Stability of performance and interfacial problems in GaAs MESFET's
5. Mechanisms for low-frequency oscillations in GaAs FET's
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1. Photoinduced instability in microwave excited GaAs MESFETs;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997
2. Low Dislocation-Density and Vacancy-Rich Glassy-Pinning Quasi GaAs Crystal by Liquid-Encapsulated Czochralski Growth;MRS Proceedings;1993
3. Idea on Momentum Effect of Gaseous Beam Particles on Epitaxial Crystal Stiffness as to Thin Film Growth Such as Metal Organic Chemical Vapor Deposition Growth and Molecular Beam Growth;MRS Proceedings;1993
4. Attempt to correlate threshold voltage scattering with x‐ray Lang topographs for semi‐insulating GaAs substrates;Journal of Applied Physics;1992-12
5. Implanted Si atoms shifting between Ga sites and As sites by thermal stress in conductive‐layer GaAs crystals on semi‐insulating substrates;Journal of Applied Physics;1992-04
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