Annealing dynamics of molecular‐beam epitaxial GaAs grown at 200 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354108
Reference8 articles.
1. Device Applications of Low-Temperature-Grown GaAs
2. Breakdown of crystallinity in low‐temperature‐grown GaAs layers
3. Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C
4. Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band
5. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
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