Atomically Precise Delineation of As Antisite Defect States from Undoped Gallium Arsenide Host Lattice by Scanning Tunneling Microscopy and Spectroscopy Measurements and Density Functional Theory Calculations-Reference-Cited by-同舟云学术

Atomically Precise Delineation of As Antisite Defect States from Undoped Gallium Arsenide Host Lattice by Scanning Tunneling Microscopy and Spectroscopy Measurements and Density Functional Theory Calculations

Published:2022-03-31 Issue:7 Volume:259 Page:2100652
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Balgos Maria Herminia M.¹²,Escaño Mary Clare S.³,Jaculbia Rafael B.¹,Quang Nguyen Tien⁴,Prieto Elizabeth Ann P.²⁵,Estacio Elmer S.²,Salvador Arnel A.²,Somintac Armando S.²,Tani Masahiko³,Hayazawa Norihiko¹²,Kim Yousoo¹²^ORCID

Affiliation:

1. Surface and Interface Science Laboratory RIKEN 2-1 Hirosawa, Wako Saitama 351-0198 Japan

2. National Institute of Physics University of the Philippines, Diliman Quezon City 1101 Philippines

3. Research Center for Development of Far-Infrared Region University of Fukui 3-9-1 Bunkyo Fukui 910-8507 Japan

4. Division of Materials and Manufacturing Science, Graduate School of Engineering Osaka University 2-1 Yamadaoka, Suita Osaka 565-0871 Japan

5. Materials Science and Engineering Program University of the Philippines, Diliman Quezon City 1101 Philippines

Funder

Japan Society for the Promotion of Science

University of Fukui

Natural Sciences Research Institute, University of the Philippines

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100652

Reference37 articles.

1. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

2. Highly efficient photoconductive antennas using optimum low-temperature-grown GaAs layers and Si substrates

3. Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties

4. Large Facet-Specific Built-in Potential Differences Affecting Trap State Densities and Carrier Lifetimes of GaAs Wafers

5. Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

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