Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361417
Reference38 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
3. Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
4. A high-gain, modulation-doped photodetector using low-temperature MBE-grown GaAs
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