Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100003
Reference9 articles.
1. Stoichiometric disturbances in ion implanted compound semiconductors
2. Recoil contribution to ion‐implantation energy‐deposition distributions
3. Transmission of 1 - 6-keV positrons through thin metal films
4. A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beam
5. Variable-energy positron-beam studies of Ni implanted with He
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1. Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon;Defect and Diffusion Forum;2000-08
2. Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions;Applied Physics A: Materials Science & Processing;1997-09-01
3. Microscopically inhomogeneous GaAs/InGaP/n+InGaAs epilayer qualities induced by Si implantation and annealing;Journal of Applied Physics;1995-11-15
4. Microstructure of the Au/GaAs(110) interface probed using a variable-energy positron beam;Journal of Physics: Condensed Matter;1994-02-07
5. Role of native oxide in the activation of implanted Si in GaAs;Journal of Applied Physics;1992-11
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