Role of native oxide in the activation of implanted Si in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352226
Reference16 articles.
1. Ion implantation in gallium arsenide MESFET technology
2. Channeling, exponential tails, and analytical modeling of Si implants into GaAs
3. Rapid Thermal Annealing of Si‐Implanted GaAs for Contact Layers of MESFET's
4. Review of Rapid Thermal Annealing of Ion Implanted GaAs
5. Nonalloyed ohmic contacts to Si‐implanted GaAs activated using SiOxNycapped infrared rapid thermal annealing
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2. Chemical composition of native oxides on noble gases implanted GaAs;Thin Solid Films;2016-10
3. Threshold Voltage Scattering of Ion Implanted GaAs Metal Semi-Conductor Field Effect Transistors;Japanese Journal of Applied Physics;2003-12
4. The Effect of Oxygen Plasma on Activation Efficiency of Implanted Silicon in Gallium Arsenide;Japanese Journal of Applied Physics;2003-05-15
5. Oxidation of Synthetic and Natural Samples of Enargite and Tennantite: 2. X-ray Photoelectron Spectroscopic Study;Langmuir;1999-05-13
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