Investigations of chemical and atomic composition of native oxide layers covering SI GaAs implanted with Xe ions-Reference-Cited by-同舟云学术

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Investigations of chemical and atomic composition of native oxide layers covering SI GaAs implanted with Xe ions

Published:2020-07 Issue: Volume:394 Page:125871
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Tuan P.L.,Kulik M.,Nowicka-Scheibe J.,Żuk J.,Horodek P.^ORCID,Khiem L.H.,Phuc T.V.,Anh Nguyen Ngoc,Turek M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference27 articles.

1. History of ion implanter and its future perspective, Sei Technical Review;Tanjyo,2011

2. Ion Implantation in Semiconductors: Silicon and Germanium;Mayer,1970

3. Fabrication of GaAs Devices;Baca,2005

4. Properties of Gallium Arsenide;Brozel,1996

5. Fabrication and performance of 0.25-μm gate length depletion-mode GaAs-channel MOSFETs with self-aligned InAlP native oxide gate dielectric;Zang;IEEE Electron Dev. Lett.,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An examination on the porosity of ErF3 doped CaF2 crystal using the Rutherford back-scattering method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

2. Pseudo-dielectric function spectra of the near surface layer of GaAs implanted with various fluence of Xe+ ions;Thin Solid Films;2022-08

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