Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
Author:
Affiliation:
1. McMaster University
2. University of Bath
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Link
https://www.scientific.net/DDF.183-185.41.pdf
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Activation Energies for the Formation and Evaporation of Vacancy Clusters in Silicon;Physical Review Letters;2008-03-05
2. Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxy;Journal of Physics D: Applied Physics;2008-02-08
3. Monovacancy and Interstitial Migration in Ion-Implanted Silicon;Physical Review Letters;2007-06-29
4. Optical attenuation in defect-engineered silicon rib waveguides;Journal of Applied Physics;2006-04
5. A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon;Applied Surface Science;2006-02
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