Activation Energies for the Formation and Evaporation of Vacancy Clusters in Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.100.095503/fulltext
Reference16 articles.
1. Self-implantation of Cz-Si: Clustering and annealing of defects
2. Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption
3. Annealing of electron-, proton-, and ion-produced vacancies in Si
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5. Positron-annihilation investigation of vacancy agglomeration in electron-irradiated float-zone silicon
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