Reduction of threading dislocations in iso‐epitaxial layers grown on (001) InP substrates by misfit stresses
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92155
Reference18 articles.
1. Spectral losses of low-OH-content optical fibres
2. Zero material dispersion in optical fibres
3. Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers
4. Multiplication of a threading dislocation in the InP/InGaAsP/InP double hetero-structure grown on InP(111)B substrate
5. X-Ray Topographic Study of Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A refined scheme for the reduction of threading dislocation densities in InxGa1−xAs/GaAs epitaxial layers;Journal of Applied Physics;1996-12-15
2. A Refined Model For Threading Dislocation Filtering In InxGa1−xAs/GaSAs Epitaxial Layers;MRS Proceedings;1996
3. Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy;Materials Science and Engineering: B;1991-11
4. Dislocation replication and annihilation in InP homoepitaxial layers grown by liquid phase epitaxy;Materials Science and Engineering: B;1990-09
5. Revealing of defects in InP by shallow (submicron) photoetching;Journal of Applied Physics;1985-07
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