Revealing of defects in InP by shallow (submicron) photoetching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335715
Reference24 articles.
1. Révélation métallographique des défauts cristallins dans InP
2. Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions
3. Observation of etch pits produced in InP by new etchants
4. H3PO4 — etching of {001}-faces of InP, (GaIn)P, GaP, and Ga(AsP)
5. Transmission electron microscopy study of microdefects in dislocation‐free GaAs and InP crystals
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1. Defect selective photoetching of GaN: Progress, applications and prospects;Progress in Crystal Growth and Characterization of Materials;2024-05
2. Non-destructive characterization of extended crystalline defects in confined semiconductor device structures;Nanoscale;2018
3. Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching;Crystals;2017-03-30
4. Revealing of defects in CdTe crystals by DSL etching;Crystal Research and Technology;2005-11
5. Selective electroless photoetching of n-type InP in acidic solution containing an heteropolyanion (SiMo12O404−);Electrochemistry Communications;2002-02
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