Multiplication of a threading dislocation in the InP/InGaAsP/InP double hetero-structure grown on InP(111)B substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
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5. Defect structure of degraded GaAlAs-GaAs double heterojunction lasers
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1. Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-09
2. Revealing of lattice defects on (111) faces of gallium phosphide and indium phosphide by chemical etching;Crystal Research and Technology;1988-01
3. Indentation fracture in the In1?x Ga x As y P1?y /InP system and its effect on microhardness anisotropy characteristics;Journal of Materials Science;1988-01
4. Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP;Semiconductors and Semimetals;1985
5. Assessment of Multiple Epilayer III-V Compound Semi-Conductors by Synchrotron Radiation Diffractometry;Advances in X-ray Analysis;1985
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