Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes-Reference-Cited by-同舟云学术

Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Published:2009-08-15 Issue:4 Volume:106 Page:044504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Caldwell J. D.,Stahlbush R. E.,Imhoff E. A.,Hobart K. D.,Tadjer M. J.,Zhang Q.,Agarwal A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3194323

Reference10 articles.

1. Degradation of hexagonal silicon-carbide-based bipolar devices

2. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

3. J. D. Caldwell, R. E. Stahlbush, E. A. Imhoff, O. J. Glembocki, K. D. Hobart, M. J. Tadjer, Q. C. Zhang, M. K. Das, and A. Agarwal, 2008 Spring Meeting of the Materials Research Society (AIP, New York, 2008), p. 195.

4. Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

5. Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07

2. Machine-learning enhanced thermal stability investigation of single Shockley stacking faults in 4H-SiC;Computational Materials Science;2024-06

3. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06

4. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04

5. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04