High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103779
Reference2 articles.
1. Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
2. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
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