Analysis of electric field distribution in GaAs metal–semiconductor field effect transistor with a field-modulating plate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372370
Reference8 articles.
1. An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications
2. Effect of surface fields on the breakdown voltage of planar silicon p-n junctions
3. High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure
4. Breakdown of overlapping-gate GaAs MESFETs
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