Kinetic and structural study of the epitaxial realignment of polycrystalline Si films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351348
Reference27 articles.
1. Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films
2. Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon
3. Effect of impurities on the grain growth of chemical vapor deposited polycrystalline silicon films
4. Compensation of grain growth enhancement in doped silicon films
5. Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus or Boron
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2. Transient crystal grain nucleation in As doped amorphous silicon;Materials Letters;2014-07
3. Epitaxial regrowth of n+ polycrystalline silicon at 850 °C, induced by fluorine implantation;Applied Physics Letters;1995-04-10
4. Phosphorus segregation at polysilicon-silicon interfaces from in situ P spike-doped silicon films;Semiconductor Science and Technology;1995-03-01
5. Interface evolution and epitaxial realignment in polycrystal/single crystal Si structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03
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