Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation-Reference-Cited by-同舟云学术

Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation

Published:2020-09-28 Issue:12 Volume:128 Page:125103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mitamura Kazuki¹^ORCID,Kutsukake Kentaro²^ORCID,Kojima Takuto³,Usami Noritaka¹^ORCID

Affiliation:

1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

2. Center for Advanced Intelligence Project, RIKEN, Tokyo 103-0027, Japan

3. Graduate School of Informatics, Nagoya University, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science

Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0017823

Reference23 articles.

1. Optimized multicrystalline silicon for solar cells enabling conversion efficiencies of 22%

2. Development of high-performance multicrystalline silicon for photovoltaic industry

3. Efficiency improved by acid texturization for multi-crystalline silicon solar cells

4. High-Efficiency n-Type HP mc Silicon Solar Cells

5. Defect generation, advanced crystallization, and characterization methods for high-quality solar-cell silicon

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