Preparation of High-performance Multicrystalline Silicon Ingot Based on Innovative Seeding Strategy for Recycled Seeds-Reference-Cited by-同舟云学术

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Preparation of High-performance Multicrystalline Silicon Ingot Based on Innovative Seeding Strategy for Recycled Seeds

Published:2024-06-14 Issue:12 Volume:16 Page:5009-5017
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Hu Runguang,Lei Qi,He Liang,Li Jianmin,Xu Yunfei,Hu Dongli,Zhang Jinbing

Funder

Yongjiang Talent Introduction Programme

Ningbo Science and Technology Project

Major Discipline Academic and Technical Leaders Training Program of Jiangxi Province

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s12633-024-03064-y.pdf

Reference20 articles.

1. Mitamura K et al (2020) Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation. J Appl Phys 128(12):125103

2. Chen L, Dai B (2012) Optimization of power consumption on silicon directional solidifcation system by using numerical simulations. J Cryst Growth 354(1):86–92

3. He L, Lei Q, Rao S, Mao W, Luo H, Xu Y, Zhou C, Li J, Ding J, Cheng X (2021) Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality. Vacuum 185:110007

4. Gan C et al (2016) Natural sedimentation of insoluble particles during directional solidifcation of upgraded metallurgical-grade silicon. J Crystal Growth 439:74–79

5. Ryningen B, Stokkan G, Kivambe M, Ervik T, Lohne O (2011) Growth of dislocation clusters during directional solidifcation of multicrystalline silicon ingots. Acta Mater 59(20):7703–7710

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