Optimization of Process Parameters for Silicon Casting Manufacturing Using Fully Transient 3D Modeling Approach-Reference-Cited by-同舟云学术

Optimization of Process Parameters for Silicon Casting Manufacturing Using Fully Transient 3D Modeling Approach

Published:2024-02-23 Issue:8 Volume:16 Page:3257-3265
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Dezfoli Amir Reza Ansari

Funder

National Science and Technology Council

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s12633-024-02905-0.pdf

Reference26 articles.

1. Mitamura K et al (2020) Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation. J Appl Phys 128(12):125103

2. Lee GH, Rhee CK, Lim KS (2006) A study on the fabrication of polycrystalline Si wafer by direct casting for solar cell substrate. Solar Energy 80(2):220–225

3. Helmreich D (1980) Current aspects of silicon casting. in Proc. Symp. on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors. Electrochemical Society Princeton, NJ

4. Chen L, Dai B (2012) Optimization of power consumption on silicon directional solidification system by using numerical simulations. J Cryst Growth 354(1):86–92

5. Rao S et al (2020) Numerical and experimental investigation of sectional heater for improving multi-crystalline silicon ingot quality for solar cells. J Crystal Growth 537:125606

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