Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4890212
Reference19 articles.
1. Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection
2. Fabrication of Semiconductor Nanowires for Electronic Transport Measurements
3. Electron transport in indium arsenide nanowires
4. Evolution of InAs branches in InAs∕GaAs nanowire heterostructures
5. Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements
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1. Laser machining of free-standing silicon nitride membranes;Journal of Materials Processing Technology;2023-09
2. Novel use of selectivity of resonance Raman spectroscopy to study polytypism and mixed to pure phase conversion in individual InAs NWs on laser irradiation;Applied Surface Science;2022-10
3. Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface;Nanotechnology;2018-08-17
4. Predicting surface modification of InAs nanowires on laser irradiation using transient thermal simulation and time evolution of Raman spectra;Journal of Alloys and Compounds;2018-02
5. Spatially resolved Raman spectroscopy study of uniform and tapered InAs micro-nano wires: correlation of strain and polytypism;Journal of Raman Spectroscopy;2017-04-12
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