Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling-Reference-Cited by-同舟云学术

Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling

Published:2011-01-31 Issue:5 Volume:98 Page:052908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Marchiori C.,Frank M. M.,Bruley J.,Narayanan V.,Fompeyrine J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3549202

Reference26 articles.

1. T. Ando, M. Frank, K. Choi, C. Choi, J. Bruley, M. Hopstaken, M. Copel, E. Cartier, A. Kerber, A. Callegari, D. Lacey, S. Brown, Q. Yang, and V. Narayanan, Proceedings of IEDM, 2009, p. 423.

2. Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

3. Infrared dielectric response and lattice vibrations of calcium and strontium oxides

4. Experimental determination of valence band maxima for SrTiO[sub 3], TiO[sub 2], and SrO and the associated valence band offsets with Si(001)

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