Source/Drain (S/D) Spacer-Based Reconfigurable Devices-Advantages in High-Temperature Applications and Digital Logic
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-4775-1_48
Reference15 articles.
1. Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM (2011) Reconfigurable silicon nanowire transistors. Nano Lett 12(1):119–124
2. Heinzig A, Mikolajick T, Trommer J, Grimm D, Weber WM (2013) Dually active silicon nanowire transistors and circuits with equal electron and hole transport. Nano Lett 13(9):4176–4181
3. Martino MDV, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E, Thean A, Claeys C (2015) Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electron 112:51–55
4. Madan J, Chaujar R, Temperature associated reliability issues of heterogeneous gate dielectric—gate all around—tunnel FET. IEEE Trans Nanotechnol 99:1. https://doi.org/10.1109/tnano.2017.2650209
5. Bhattacharjee A, Saikiran M, Dutta A, Anand B, Dasgupta S (2015) Spacer engineering-based high-performance reconfigurable FET with low off current characteristics. IEEE Electron Device Lett 36(5):520–522
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