Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

Author:

Tasneem Nujhat1,Kashyap Harshil2ORCID,Chae Kisung23,Park Chinsung1,Lee Ping-che2,Lombardo Sarah F4,Afroze Nashrah1,Tian Mengkun1ORCID,Kumarasubramanian Harish5,Hur Jae1,Chen Hang1,Chern Winston1,Yu Shimeng1,Bandaru Prabhakar6ORCID,Ravichandran Jayakanth57,Cho Kyeongjae3ORCID,Kacher Josh4,Kummel Andrew C.2ORCID,Khan Asif Islam14

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

2. Department of Chemistry and BioChemistry, University of California, San Diego, La Jolla, California 92093, United States

3. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

4. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

5. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States

6. Department of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States

7. Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles 90089, United States

Funder

Defense Advanced Research Projects Agency

Georgia Institute of Technology

Applied Materials

Intelligence Advanced Research Projects Activity

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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