Stimulated emission in GaN thin films in the temperature range of 300–700 K-Reference-Cited by-同舟云学术

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Stimulated emission in GaN thin films in the temperature range of 300–700 K

Published:1999-02 Issue:3 Volume:85 Page:1792-1795
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bidnyk S.,Little B. D.,Schmidt T. J.,Cho Y. H.,Krasinski J.,Song J. J.,Goldenberg B.,Yang W.,Perry W. G.,Bremser M. D.,Davis R. F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369325

Reference14 articles.

1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

2. High responsitivity intrinsic photoconductors based on AlxGa1−xN

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire

5. Spontaneous and stimulated emission from photopumped GaN grown on SiC

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices;Science;2010-10-29

2. Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate;Applied Physics Letters;2007-04-09

3. Stimulated emission due to spatially separated electron-hole plasma and exciton system in homoepitaxial GaN;Physical Review B;2004-06-24

4. Optical properties of highly excited (Al, In) GaN epilayers and heterostructures;Handbook of Thin Films;2002

5. Electron-hole plasma emission fromIn0.3Ga0.7N/GaNmultiple quantum wells;Physical Review B;2001-03-07

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