Electron-hole plasma emission fromIn0.3Ga0.7N/GaNmultiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.121308/fulltext
Reference41 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
2. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
3. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
4. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
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