Two-dimensional hybrid perovskite resistive switching memory inherited from photovoltaic devices

Abstract

Ions or charged vacancies drift induced by electric fields in organic–inorganic halide perovskites (OIHPs) generally contributes to distinct current–voltage hysteresis, which drives the development of resistive switching memory (RSM) devices. Here, the two-dimensional (2D) OIHP films are adopted as the switching layer to fabricate the RSM devices with a simplified photovoltaic structure. The device displays stable and low voltage resistive switching (RS) characteristics, with an on/off ratio greater than 106 and a switching voltage as low as 0.4 V. After adding a NiOx hole transport layer in a completed photovoltaic device, the fabricated RSM devices without encapsulation show reliable RS behavior with an endurance over 4 × 102 cycles and a retention time of 103 s in atmospheric conditions. Both Ag ions and iodine vacancies conductive filaments are responsible for the RS properties. This work provides a perspective for appvlication in high-performance 2D OIHP RSM devices compatible with photovoltaic behavior.