Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio-Reference-Cited by-同舟云学术

Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio

Published:2021-11-23 Issue:3 Volume:18 Page:2103881
ISSN:1613-6810
Container-title:Small
language:en
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Author:

Li Lutao¹,Chen Yuan¹,Cai Changming²,Ma Peipei¹,Ji Huayong²,Zou Guifu¹^ORCID

Affiliation:

1. College of Energy Soochow Institute for Energy and Materials Innovations Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow University Suzhou 215000 China

2. Suzhou O‐Light Optical Technology Co., Ltd. Suzhou 215000 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202103881

Reference62 articles.

1. Is There an Immortal Memory?

2. The chips are down for Moore’s law

3. Nanoionics-based resistive switching memories

4. The missing memristor found

5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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