Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures-Reference-Cited by-同舟云学术

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

Published:2024 Issue:7 Volume:9 Page:1146-1154
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Loizos Michalis¹,Rogdakis Konstantinos¹²^ORCID,Luo Weifan³,Zimmermann Paul⁴,Hinderhofer Alexander⁴,Lukić Jovan³^ORCID,Tountas Marinos¹,Schreiber Frank⁴^ORCID,Milić Jovana V.³^ORCID,Kymakis Emmanuel¹²^ORCID

Affiliation:

1. Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece

2. Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece

3. Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland

4. Institute of Applied Physics, University of Tübingen, Tübingen 72076, Germany

Abstract

Mixed-dimensional heterostructures of 2D perfluoroarene perovskite phases are used in resistive switching memories based on perovskite solar cells, showing enhanced performance and stability, which highlights the perspective for self-powered memories.

Funder

Horizon 2020 Framework Programme

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Bundesministerium für Bildung und Forschung

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D4NH00104D

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