Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (0001) Si-face and ( 000 1 ¯) C-face by using a new Si-O-C interatomic potential-Reference-Cited by-同舟云学术

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (0001) Si-face and ( 000 1 ¯) C-face by using a new Si-O-C interatomic potential

Published:2018-05-14 Issue:18 Volume:123 Page:185303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Takamoto So¹^ORCID,Yamasaki Takahiro²,Ohno Takahisa²,Kaneta Chioko³,Hatano Asuka¹,Izumi Satoshi¹

Affiliation:

1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5028273

Reference27 articles.

1. Transition layers at the SiO2∕SiC interface

2. ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces

3. Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface

4. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

5. Formation of atomically smooth SiO2/SiC interfaces at ∼120°C by use of nitric acid oxidation method

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