Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si-Reference-Cited by-同舟云学术

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Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Published:2011-03-21 Issue:12 Volume:98 Page:123114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hertenberger S.,Rudolph D.,Bolte S.,Döblinger M.,Bichler M.,Spirkoska D.,Finley J. J.,Abstreiter G.,Koblmüller G.

Funder

European Union

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3567496

Reference25 articles.

1. Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection

2. Si–InAs heterojunction Esaki tunnel diodes with high current densities

3. A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires

4. Axial and radial growth of Ni-induced GaN nanowires

5. Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

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