Multiple quantum well AlGaAs/GaAs field‐effect transistor structures for power applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99129
Reference5 articles.
1. Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer‐layer thickness and gate electric field
2. High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's
3. Multiple-channel GaAs/AlGaAs high electron mobility transistors
4. Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures
5. Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature
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3. Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance;Applied Physics Letters;2018-12-10
4. Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure;Physica E: Low-dimensional Systems and Nanostructures;2015-01
5. AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures;Applied Physics Letters;2010-05-24
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