Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer‐layer thickness and gate electric field
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95202
Reference9 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
3. A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
4. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
5. Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation
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