Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
Author:
Affiliation:
1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
2. Low Noise Factory AB, Gothenburg, Sweden
Funder
Vinnova in Eurostars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9811240/09783456.pdf?arnumber=9783456
Reference27 articles.
1. Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP
2. 0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
3. Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors
4. Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications
5. Ultra-Wideband Chip Attenuator for Precise Noise Measurements at Cryogenic Temperatures
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1. Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K;IEEE Transactions on Electron Devices;2024-05
2. Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications;Engineering Research Express;2024-03-01
3. Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content;IEEE Journal of the Electron Devices Society;2024
4. Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAs;2023 International Electron Devices Meeting (IEDM);2023-12-09
5. Fabrication and Characterization of High Indium In0.7Ga0.3As Channel MHEMT on GaAs Substrate;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10
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