Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370648
Reference20 articles.
1. Oxygen precipitation in silicon
2. Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
3. The Effects of Thermal History during Growth on O Precipitation in Czochralski Silicon
4. Time-lag in nucleation of oxide precipitates in silicon due to high temperature preannealing
5. Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues
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